173-units min. STMicroelectronics N-channel Mosfet 600v, 13a - STB18N60M2
Slide 1 of 1
Manufacturer
STMicroelectronics
MPN
STB18N60M2
MOQ
173
Available
0
Condition
New
STMicroelectronics STB18N60M2 - N-channel Mosfet 600v, 13a
The STMicroelectronics STB18N60M2 is a high-performance N-channel Mosfet designed for use in a wide range of applications. With a maximum voltage rating of 600v and a current handling capacity of 13a, this Mosfet is capable of delivering reliable and efficient power management.
The STB18N60M2 is part of their extensive range of power management solutions, designed to meet the demanding requirements of modern electronic devices. It also has a low gate charge, which helps to reduce power losses and improve overall efficiency.
Specifications | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 791 pF @ 100 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Please refer to the following attachments for additional details on the product.
No specifications available.